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Silicon carbide etched disk and manipulator

short description:

SiC products have excellent mechanical properties at room temperature, such as high strength, high hardness, high elastic modulus, etc. It also has excellent high temperature stability, such as high thermal conductivity and low thermal expansion coefficient, as well as good specific stiffness and optical processing performance. It is especially suitable for preparing precision ceramic structures for integrated circuit equipment such as lithography machine, such as precision moving worktable, framework, suction cup, water-cooled plate, precision measuring mirror, grating and other ceramic structures used in lithography machine. After years of technical breakthrough, KSINO has solved the problem of precision machining and products, such as large size, thin thickness, hollow structure and other complex SiC structural parts. This not only breaks through the technical bottleneck of the precision silicon carbide structural parts’ manufacturing technology, but also greatly promotes the localization of key structural parts for integrated circuit manufacturing equipment. 


Product Detail

Product Tags

Application

1. SiC products mainly include Sintered Silicon Carbide (SSiC), Reaction Sintered Silicon Carbide (RBSC) and Chemical Vapor Deposition Silicon Carbide (CVD SiC).

2. SiC product has various excellent properties:

 Super hardness

 Excellent wear resistance

 High thermal conductivity and mechanical strength

Low coefficient of thermal expansion

 Excellent thermal stability

 Low density

 Specific stiffness

 Nonmagnetic

3. At present, SiC products are used in aviation, aerospace, nuclear industry and other industries, such as SiC mirrors, ceramic parts for high-end equipment such as integrated circuit manufacturing, heat exchangers under extreme conditions, bulletproof materials, etc.

Properties

SP-F

SP-K

SP-CT

Density g/cm3

2.98-3.02

3.16

3.1

Young's Modulus   Gpa

368

440

393

Flexural Strength  Mpa

334

450

462

Weibull

8.35

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CTE(*10-6/℃)

100℃

2.8x10-6

40-400℃

3.7x10-6

25-1000℃

4.3x10-6

400℃

3.6x10-6

800℃

4.2x10-6

40-800℃

4.4x10-6

1000℃

4.6x10-6

Thermal Conductivity 20℃(W/m.k)

160-180

200

125

Poisson's Ratio

0.187

0.17

0.2

Shear Modulus  Gpa

155

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